Research Bits: Dec. 16

Research Bits: Dec. 16

Back-end integration Researchers from Massachusetts Institute of Technology (MIT) and the University of Waterloo propose a back-end integration platform that enables the fabrication of transistors and memory devices in a single compact stack on a chip. The approach uses amorphous indium oxide as the active channel layer of the back-end transistor. The properties of indium oxide allow a thin layer to be grown at a temperature of about 150 degrees…