Renesas Pushes Forward on Edge AI and Power Management with Two Announcements

Powering the Future with Renesas Next-Gen GaN and AI-Ready MCUs Powering the Future with Renesas Next-Gen GaN and AI-Ready MCUs

Powering the Future with Renesas Next-Gen GaN and AI-Ready MCUs When it comes to driving next-generation data centres, AI engines, and energy infrastructure, power conversion needs to be fast, compact and outrageously efficient. Renesas Electronics is stepping up to the plate with a powerful new suite of high-voltage GaN FETs built on its SuperGaN platform, backed by cutting-edge AI-ready microcontrollers (MCUs). The result? A seamless fusion of…

First MCU combines gigahertz CPU, 35× faster AI engine and MRAM in single device - Research & Development World

Japanese semiconductor firm Renesas Electronics has unveiled the RA8P1, positioning it as a breakthrough microcontroller that integrates gigahertz-class processing, dedicated AI acceleration hardware and magnetoresistive RAM (MRAM) on a single 22-nanometer chip. The chip includes graphics capabilities, multiple connectivity interfaces and advanced security features typically associated with higher-end processors. In a press briefing, Renesas bil…

Renesas Pushes Forward on Edge AI and Power Management with Two Announcements

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Renesas Strengthens Power Leadership with New GaN FETs - Semiconductor Digest

Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN tec…