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Laser-Focused Results: Improving EUV Line Edge Roughness With Ion Beam Etching
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Laser-Focused Results: Improving EUV Line Edge Roughness With Ion Beam Etching
Extreme ultraviolet (EUV) lithography exposed resist patterns can exhibit excessive line edge roughness (LER) and line width roughness (LWR) due to random or shot noise. Increasing the EUV exposure dose can reduce LER/LWR, but it also decreases wafer throughput, which is highly undesirable given the EUV tool’s high operating costs. Ion beam etching (IBE) can directionally etch away rough areas of the line and space resist pattern to improve LER/…
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