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Impact of Cu Microstructure On The TSV-Induced Residual Stress Within Silicon (Purdue, UCLA)
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Impact of Cu Microstructure On The TSV-Induced Residual Stress Within Silicon (Purdue, UCLA)
Researchers at Purdue University and the UCLA published a technical paper titled “Experimental Evidence for the Impact of Copper Microstructure on Residual Stress of Through Silicon Via.” Abstract Excerpt: “Here, we experimentally quantify the impact of Cu microstructure on the TSV-induced residual stress within silicon. A 3-m-diameter TSV array was annealed at 400 °C for... »
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