New Semiconductor Technology Could Supercharge 6G Delivery

New Semiconductor Technology Could Supercharge 6G Delivery

A team at the University of Bristol developed SLCFETs, a breakthrough transistor structure that leverages a latch effect in GaN materials to enhance speed and power, advancing the future of 6G. Self-driving cars that eliminate traffic jams, receiving a healthcare diagnosis instantly without leaving your home, or feeling the touch of loved ones across the [...]

New Semiconductor Technology Could Supercharge 6G Delivery – DG Verifications & Stats

An artistic image of a futuristic semiconductor device which will help make 6G technology a reality. Credit: University of Bristol A team at the University of Bristol developed SLCFETs, a breakthrough transistor structure that leverages a latch effect in GaN materials to enhance speed and power, advancing the future of 6G. Self-driving cars that eliminate traffic jams, receiving a healthcare diagnosis instantly without leaving your home, or feel…

Imec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode) device operating at low supply vo…

Imec Achieves Record-Breaking RF GaN-on-Si Transistor Performance for High-Efficiency 6G Power Amplifiers - Semiconductor Digest

Imec, a research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile applications.