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High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)
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High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)
A new technical paper titled “High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping” was published by researchers at Penn State University and Florida International University. Abstract “Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has remained challenging, hindering the development of fully…
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