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Doping Mechanism Of Pure Nitric Oxide In Tungsten Diselenide Transistors (Purdue, MIT, NYCU)
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Doping Mechanism Of Pure Nitric Oxide In Tungsten Diselenide Transistors (Purdue, MIT, NYCU)
A technical paper titled “Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors” was published by researchers at Purdue University, MIT and National Yang Ming Chiao Tung University (with support from Intel Corporation). “Atomically thin two-dimensional (2D) semiconductors are promising candidates for beyond-silicon electronic devices. However, an excessive contact resistance due to ineffective or non-existen…
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