World's lowest write power operation for high-speed SOT-MRAM cell achieved

World's lowest write power operation for high-speed SOT-MRAM cell achieved

Researchers at the Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, have achieved the world's lowest write power for a specific type of memory storage device. Not only does this device boast record-breaking energy-efficiency, but it is also incredibly fast. This finding may lead to revolutionary advancements in memory storage device technology that also contribute to a greener, more efficient future.