650V 3rd Generation SiC MOSFETs in Compact TOLL Package

Toshiba launches 650 V SiC MOSFETs in TOLL packages for EV charging and power electronics - Charged EVs

Toshiba Electronic Devices & Storage Corporation has introduced three 650 V silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) that use its third-generation SiC technology in surface-mount TOLL packages. These new devices, part numbers TW027U65C, TW048U65C, and TW083U65C, are designed for industrial power electronics with initial volume shipments beginning August 2025. The company reports that these third-generati…

650V 3rd generation SiC MOSFETs in compact TOLL package

Toshiba announces the release of three new 650V silicon carbide (SiC) MOSFETs, which incorporate its latest 3rd generation SiC MOSFET chips. The TW027U65C, TW048U65C, and TW083U65C are housed in a surface-mount TOLL package and are designed to reduce switching losses in industrial equipment. They are suitable for a wide range of demanding power applications, including switched-mode power supplies (SMPS) in servers, data centres and communication…