Simple Solution Yields Ultra-Thin Tin Sulfide Sheets for Next-Generation Electronics

Simple solution yields ultra-thin tin sulfide sheets for next-generation electronics

A team of researchers from Tohoku University, National Institutes for Quantum Science and Technology (QST), and Cambridge University have demonstrated a new way to make a unique material called tin sulfide (SnS), which can help build better and more compact electronic devices. Their findings are published in Nano Letters.

Tin Sulfide Advance Paves Way For Faster, More Efficient Electronics

Researchers have developed a streamlined process for creating singleatomlayer tin sulfide a material with potential for advanced electronics This method reliably produces highquality SnS crystals on silicon wafers offering a pathway to faster more efficient computers utilising spintronics and valleytronics The technique addresses previous challenges in selectively forming pure SnS crystals