STMicroelectronics’ New Galvanically Isolated Gate Drivers Aim To Simplify Power Design With Advanced Isolation
2 Articles
2 Articles
STMicroelectronics (ST) announced on the 31st that it has released a 3-ampere (A) gate driver for controlling silicon carbide (SiC) power semiconductors and insulated gate bipolar transistors (IGBTs). A gate driver is a semiconductor that controls the switching operation of a power semiconductor to allow or block current. It transmits control signals using reinforced galvanic technology that electrically separates the high-voltage power section …
STMicroelectronics’ New Galvanically Isolated Gate Drivers Aim To Simplify Power Design With Advanced Isolation
July 29, 2026, Geneva, Switzerland — STMicroelectronics has extended the STGAP3S family of gate drivers that feature enhanced galvanic isolation for greater reliability, introducing an efficient and economical 3A series for circuits that need lower drive current. The new STGAP3S3S is optimized for silicon carbide (SiC) MOSFETs, while the STGAP3S3IF is suited to IGBTs. All STGAP3S drivers work with high-voltage rails up to 1200V in circuits such …
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