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SK Hynix Ships Samples of Next-Generation HBM4E Memory Chips
The 12-high samples deliver 16 Gbps per pin and more than 20% better power efficiency as SK hynix prepares for mass production with partners.
- On Thursday, SK hynix Inc. began shipping samples of its 12-layer HBM4E memory chips to major global customers, advancing next-generation artificial intelligence applications.
- The HBM4E samples leverage advanced DRAM to deliver 16 Gbps of speed per pin, utilizing Advanced Mass Reflow-Molded Underfill technology to achieve 48-gigabyte capacity within the 12-layer stack.
- Compared to the preceding HBM4, the new design improves heat resistance by 17 percent and increases power efficiency by more than 20 percent, enabling stable operation in high-performance computing environments.
- Local rival Samsung Electronics shipped HBM4E samples last month, intensifying competition to supply critical components to Nvidia Corp., Google, and Advanced Micro Devices Inc.
- The Vera Rubin Ultra platform is expected to use the new memory next year, with the system designed to utilize 12 HBM4E stacks per GPU to expand computing capabilities.
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17 Articles
SK Hynix is supplying samples of its 7th generation high-bandwidth memory (HBM4E) to major customers. Following Samsung Electronics' announcement last month of supplying the world's first 12-layer HBM4E samples, SK Hynix is also moving to supply next-generation products, leading to analysis that competition between the two companies over the memory market for artificial intelligence (AI) semiconductors is intensifying.
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Total News Sources17
Leaning Left2Leaning Right2Center5Last UpdatedBias Distribution56% Center
Bias Distribution
- 56% of the sources are Center
56% Center
L 22%
C 56%
R 22%
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