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SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
- SK hynix announced on May 21, 2025 in Seoul the development of a UFS 4.1 solution product for mobile applications.
- The development addresses the growing need for NAND solutions that deliver enhanced speed and energy efficiency to support AI processing directly on devices.
- The product features an industry-leading 321-layer 1Tb TLC 4D NAND technology, achieves a 15% reduction in thickness to 0.85mm for slimmer devices, and delivers enhanced performance with sequential read speeds of 4300MB/s along with improvements of 15% and 40% in random read and write speeds, respectively.
- President Ahn Hyun stated that SK hynix is progressing well in strengthening its role as a comprehensive AI-focused memory supplier within the NAND sector by developing a range of products enhanced with advanced AI technology.
- SK hynix expects the UFS 4.1 solution to strengthen its leadership in flagship smartphone markets and complete development of a 321-high 4D NAND SSD for consumers and data centers within 2025.
58 Articles
58 Articles
SK hynix develops new flash storage chip using 321-layer NAND
SK hynix said Thursday it has developed a mobile universal flash storage (UFS) chip based on the world's highest 321-layer 1 terabit NAND flash technology, delivering faster, more power-efficient data...
SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
Optimized for on-device AI with best-in-class sequential reading performance, low power requirementThickness reduced by 15% to fit into ultra-slim flagship smartphonesPortfolio with world's highest 321-layer product to enhance SK hynix's leadership as full stack AI memory provider
1Tbyte NAND memory with 321 layers fits in AI smartphones
Sk Hynix has launched a NAND memory with 321 layers that is 0.85mm high to fit into flagship AI smartphone designs The memory is optimised for on-device AI with fast sequential read performance and low power, and the thickness reduced by 15% to fit into flagship AI smartphone designs with 512GB and 1TB. The NAND memory […] The post 1Tbyte NAND memory with 321 layers fits in AI smartphones appeared first on eeNews Europe.
SK Hynix unveils 321-layer UFS 4.1 that is faster, thinner and more efficient than the previous gen
Memory maker SK hynix has announced the world’s first 321-layer UFS 4.1 TLC NAND flash for smartphones. It’s faster, more efficient and thinner to boot – perfect for the next generation of phones that will focus on slim builds and AI tools, says the company. Compared to the previous generation (which used a 238-layer design) from 2022, these new storage chips have 15% higher random read and 40% higher random write speeds. For sequential reads, t…
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