Samsung Reveals Next-Gen Memory with Stacked HBM and 400-Layer NAND
The roadmap centers on zHBM and V10 BV-NAND, with Samsung saying the new memory designs can boost density and efficiency for AI systems.
- At the Future of Memory and Storage 2026 conference in Santa Clara, California, Samsung unveiled a roadmap featuring Bonding V-NAND architecture with more than 400 layers, vertically stacked High Bandwidth Memory, and a next-generation NAND approach.
- Thirteen years after introducing its first V-NAND technology, Samsung unveiled V10 BV-NAND, which boosts memory density by about 58% over the previous generation using wafer bonding to stack more than 400 layers.
- Samsung also introduced a new High Bandwidth Memory concept that stacks memory directly on processors, achieving more than 10 times the density of HBM5 while improving energy efficiency threefold and cutting thermal resistance.
- The company showcased a next-generation NAND approach for edge applications alongside its LPDDR5X-PIM memory chip, which features Processing-In-Memory to perform computations within memory before sending results to the processor.
- Executives Jin-Yub Lee and Kyungryun Kim presented the keynote titled "Driving the Wave of AI Revolution: 3D Innovations in Memory & Storage Architecture," detailing how these technologies target large-scale training workloads in data centers and edge applications.
29 Articles
29 Articles
(Seoul = Yonhap News) Reporter Kang Tae-woo = Samsung Electronics [discussed] next-generation memory technology at the 'FMS Awards' held during the global memory technology conference 'FMS 2026'.
Samsung showcases fast and efficient BV-NAND V10 storage, zHBM for AI accelerators
Samsung is showcasing a great variety of memory and storage technologies at its booth at the Future of Memory and Storage (FMS) 2026 event in Santa Clara, California. Thirteen years after it introduced the first V-NAND technology, Samsung is the first to unveil V10 of BV-NAND (Bonded V-NAND). This is a flash memory that has more than 400 layers and leverages Samsung’s advanced bonding technology to stack memory cells. V10 increases memory densit…
SANTA CLARA, California--(BUSINESS WIRE)--August 5, 2026-
Samsung reveals next-gen memory with stacked HBM and 400-layer NAND
At the Future of Memory and Storage 2026 conference in Santa Clara, California, the company laid out a roadmap built around three main technologies: a new Bonding V-NAND architecture with more than 400 layers, a concept for vertically stacked high-bandwidth memory called zHBM, and a next-generation NAND approach called zNAND-O....Read Entire Article
Samsung Stacks High-bandwidth Memory Chips on Top of AI Chips in 3D Memory Push, Promises Up to Eightfold Performance
Get latest articles and stories on Business at LatestLY. Samsung Electronics is placing high-bandwidth memory directly on top of AI processors as part of a 3D memory architecture push designed to lower power consumption and deliver faster data transfers, according to a news report by The Korea Herald. Business News | Samsung Stacks High-bandwidth Memory Chips on Top of AI Chips in 3D Memory Push, Promises Up to Eightfold Performance.
Coverage Details
Bias Distribution
- 57% of the sources lean Right
Factuality
To view factuality data please Upgrade to Premium
