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Samsung Reportedly to Use 2 nm Process on HBM4E Base Die
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Samsung Reportedly to Use 2 nm Process on HBM4E Base Die
Samsung is reportedly planning to bring its 2 nm process to the base die of HBM4E, its 7th-generation high-bandwidth memory. This comes just a month after the company shipped the industry's first commercial HBM4, and alongside a separate effort to redesign the HBM4E power delivery network to handle the increase in power bumps from 13,682 to 14,457 within the same footprint. Until HBM3, the base die had a somewhat passive role, sitting at the bot…
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