Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year
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WTVBSamsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year
SEOUL, Sept 29 : A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30 per cent of Dynamic Random-Access Memory (DRAM) chipmakers' total wafer capacity next year, up from about 20 per cent currently. Samsung Electronics Executive Vice President K
As far as Samsung is concerned, almost one third of the world's built-in memory will be exclusively so-called "HBM", i.e. special memory, which is installed in AI databases. This is not good news for PC users. (Continue reading)
HBM to account for nearly 30% of DRAM wafer capacity in 2027, Samsung
A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30% of Dynamic Random-Access Memory (DRAM) chipmakers’ total wafer capacity next year, up from about 20% currently. Samsung Electronics Executive Vice President Kim Taewoo said HBM and standard DRAM compete for the same wafer capacity, meaning expanding HBM […]
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