ROHM Develops 5th Generation SiC MOSFETs with Approximately 30% Lower On-Resistance at High Temperatures

ROHM Develops 5th Generation SiC MOSFETs with Approximately 30% Lower On-Resistance at High Temperatures

Santa Clara, CA and Kyoto, Japan, April 21, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has

ROHM's new 5th-gen EcoSiC devices cuts SiC MOSFET on-resistance 30%

ROHM has developed its 5th Generation SiC MOSFETs under the EcoSiC brand, delivering approximately 30% lower ON resistance during high-temperature operation compared to its 4th Generation devices. The comparison is at Tj=175°C with equivalent breakdown voltage and chip size—meaning the reduction comes from structural enhancements and manufacturing process optimization, not geometry scaling. Lower on-resistance at high operating temperatures matt…