Renesas Introduces High-Efficiency 650 V GaN FETs Targeting EV Charging and Power Electronics – Charged EVs

EPC Intros GaN 3-Phase Motor Drive Inverter Eval Board

EPC9196 brings high-speed, medium-voltage BLDC drive capability to compact platforms.

Renesas introduces high-efficiency 650 V GaN FETs targeting EV charging and power electronics – Charged EVs

Renesas introduces high-efficiency 650 V GaN FETs targeting EV charging and power electronics  Charged EVs Source link The post Renesas introduces high-efficiency 650 V GaN FETs targeting EV charging and power electronics – Charged EVs first appeared on Online EV Marketplace.

Renesas introduces high-efficiency 650 V GaN FETs targeting EV charging and power electronics - Charged EVs

Renesas Electronics has announced three new 650 V high-voltage gallium nitride (GaN) field-effect transistors (FETs) developed specifically for e-mobility charging stations, AI data center and server power supplies (including 800 V HVDC architectures) and battery energy storage. The fourth-generation plus (Gen IV Plus) devices—named TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—are based on the proven SuperGaN platform acquired through Renesas…

650V GaN from Renesas in TOLT, TO-247 and TOLL

Renesas has introduced three 650V GaN power transistors, aimed at server power supplies and e-mobility chargers. “Designed for multi-kilowatt-class applications, these devices combine GaN technology with a silicon-compatible gate drive ... The post 650V GaN from Renesas in TOLT, TO-247 and TOLL appeared first on Electronics Weekly.

Renesas doubles down on GaN as competition hots up

Renesas Electronics says it is doubling down on its commitment to gallium nitride (GaN) power devices with a move to 200mm wafers with 650V d-mode devices as the market heats up. Navitas Semiconductor is also moving to 200mm wafers through a deal with Powerchip and Infineon Technologies is readying production on even larger 300mm wafers. […] The post Renesas doubles down on GaN as competition hots up appeared first on eeNews Europe.

Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

TOKYO, Japan, July 1, 2025 ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen …