Focused Helium Ions Create Ferroelectric Regions in Aluminum Nitride for Lower-Power Chips

Focused helium ions create ferroelectric regions in aluminum nitride for lower-power chips

Scientists at the Department of Energy's Oak Ridge National Laboratory have shown for the first time that ferroelectricity can be directly written into aluminum nitride using a tightly focused helium ion beam at the Center ...

New Material Approach Could Lead to Lower-Power Devices

Scientists at Oak Ridge National Laboratory showed they can "write" ferroelectric regions into aluminum nitride by using a helium ion beam to create precise defects while keeping the crystal intact. Ferroelectric materials can store information without needing continuous power, so this could lead to more reliable, lower-energy memory made with processes already used in chip manufacturing. The defect patterning reduced the amount of voltage neede…