Material Properties of Si/SiGe Multi-layer Stacks For CFETs (Imec, Ghent U, et al.)

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Material Properties of Si/SiGe Multi-layer Stacks For CFETs (Imec, Ghent U, et al.)

A new technical paper titled “Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices” was published by researchers at Imec and Ghent University, et al. Abstract “After a short description of the evolution of metal-oxide-semiconductor device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material properties of complicated Si/SiGe multi-layer stacks used …