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Infineon to Sample First GaN ICs Made on 300mm Wafers in Q4
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Last year, Infineon announced the establishment of a first pilot line for the production of power semiconductors based on gallium nitride (GaN).
Infineon Technologies (CEO Seung-soo Lee) announced on the 3rd that it has recently started full-scale production of gallium nitride (GaN) power semiconductors based on 300mm wafers and plans to provide the first samples to customers starting in the fourth quarter. GaN is considered one of the three key materials for power semiconductors along with silicon (Si) and silicon carbide (SiC). In particular, GaN is attracting attention as a key techno…
Infineon to sample first GaN ICs made on 300mm wafers in Q4
Infineon will sample customers with GaN chips made on 300mm wafers in Q4. “Our fully scaled-up 300mm GaN manufacturing will allow us to deliver highest value to our customers even ... The post Infineon to sample first GaN ICs made on 300mm wafers in Q4 appeared first on Electronics Weekly.
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