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Hong Kong university engineers breakthrough in microelectronics
The device achieved sub-60 mV/decade switching at room temperature and cut the gate-voltage range to 160 mV, researchers said.
- The Hong Kong Polytechnic University research team engineered a novel tunnelling field-effect transistor using 2D nanomaterials, led by Professor Jianhua Hao, head of the Department of Physics and Materials.
- Conventional transistors rely on thermionic emission requiring a minimum gating voltage of 60 mV, but the physical "Boltzmann limit" makes subthreshold swing values below 60 mV decade impossible at room temperature, restricting energy efficiency.
- Operating at room temperature on silicon substrates, the device utilizes an ultra-thin heterostructure of 2D bismuth and indium selenide, requiring a gate-voltage range of only 160 mV versus the 800 mV originally required.
- The device resolves experimental TFET challenges by delivering high output current and an exceptionally high ON/OFF current ratio, achieving subthreshold swing values well below the 60 mV limit.
- Published in the journal Science, the breakthrough enables ultra-low-power, high-performance integrated circuits. "By adopting quantum tunnelling, our TFET breaks through this boundary," Prof. Hao said, highlighting importance for emerging AI chips.
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