Demonstration Of An ALD IWO Channel In A GAA Nanosheet FET Structure (Georgia Tech, Micron)

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Demonstration Of An ALD IWO Channel In A GAA Nanosheet FET Structure (Georgia Tech, Micron)

A new technical paper titled “First Demonstration of High-Performance and Extremely Stable W-Doped In2O3  Gate-All-Around (GAA) Nanosheet FET” was published by researchers at Georgia Institute of Technology and Micron. Abstract “We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-deposited (ALD) tungsten (W)-doped indium oxide (In2O3), or indium tungsten oxide (IWO), channel. A novel channel release process is develope…